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High-Efficiency Multiple Quantum Well Triple-Junction
In this work, an InGaAs-GaAs multiple quantum well (MQW) structure is used to incorpo-rate the IBSC structure into the tandem solar cell. The proposed cell structure shows the efficiency of
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Optical design and bandgap engineering in
In this work, the implications of the optical design and the bandgap engineering in ultrathin hydrogenated amorphous Si/Ge multiple
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Design optimization of multi quantum well solar cells
This work provides the most comprehensive and qualitative picture of MQW solar cell, and serve a useful guide for designing and interpreting the characteristic parameters of
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Multi-Quantum Well (MQW) GaAs/AlGaAs Solar Cell
Multi-quantum well (MQW) solar cells offer a potential device structure which can improve the current generation and efficiency of conventional p-i-n junction solar cells.
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Optical design and bandgap engineering in ultrathin multiple
In this work, the influence of different Si/Ge MQW nanoabsorber configurations on the characteristics of ultrathin solar cells featuring a deep-subwavelength photonic resonator is
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Changes in the extraction and collection efficiency of GaN-based
GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for application in space environment, concentrator solar systems, wireless power
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InGaN/GaN Multiple Quantum Wells Solar Cell as an Efficient Power
A changeable band gap and radiation hard ternary indium gallium nitride (InGaN) with multiple quantum well (MQW) structure-based solar cell is numerically modelled and
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Record Efficiency Multijunction Solar Cells with Strain
This work was authored by the National Renewable Energy Laboratory, operated by Alliance for Sustainable Energy, LLC, for the U.S. Department of Energy (DOE) under Contract No. DE
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Evaluation of Photoconversion Efficiency in
The photoelectric conversion efficiency of InGaN/GaN multiple quantum well (MQW) solar cells has been investigated at high
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Changes in the extraction and collection efficiency of GaN-based MQW
GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for application in space environment, concentrator solar systems, wireless power
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Optical design and bandgap engineering in ultrathin multiple
In this work, the implications of the optical design and the bandgap engineering in ultrathin hydrogenated amorphous Si/Ge multiple quantum well (MQW) solar cells featuring
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Harsh photovoltaics using InGaN/GaN multiple quantum well
To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency
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InGaN/GaN Multiple Quantum Wells Solar Cell as an Efficient
A changeable band gap and radiation hard ternary indium gallium nitride (InGaN) with multiple quantum well (MQW) structure-based solar cell is numerically modelled and
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Harsh photovoltaics using InGaN/GaN multiple quantum well schemes
To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency
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Evaluation of Photoconversion Efficiency in InGaN/GaN MQW Solar
The photoelectric conversion efficiency of InGaN/GaN multiple quantum well (MQW) solar cells has been investigated at high temperatures and the study revealed that
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